Professor Yoosuf N. Picard
Associate Research Professor of Materials Science and Engineering
Ph.D., University of Michigan
Department of Materials Science and Engineering
Carnegie Mellon University
5000 Forbes Avenue
Roberts Engineering Hall 144
Pittsburgh, PA 15213
Phone: (412) 268-3044
Fax: (412) 268-3113
Professor Picard's Group Web Site
Professor Picard obtained a B.S. in Mechanical Engineering from Louisiana Tech University in 2001 and a Ph.D. in Materials Science and Engineering from the University of Michigan in 2006. During his graduate career, he was a Microsystems Engineering and Science Applications Fellow at Sandia National Laboratories where he researched focused ion beam applications as well as pulsed laser ignition phenomenon in energetic thin films. Following his doctoral research on materials modifications by femtosecond lasers, he was a postdoctoral research associate at the U.S. Naval Research Lab (NRL), where he conducted electron microscopy studies of GaN devices, SiC thin films, and metal-oxide nanowires. He was subsequently hired as a staff scientist at NRL to carry out electron microscopy studies of metal alloy surfaces and magnetic metal-oxide thin films. He joined the faculty at Carnegie Mellon University in 2009.
Transmission electron microscopy, scanning electron microscopy, electron channeling contrast imaging, electron backscatter diffraction, dislocation analysis in semiconducting materials and devices, structural analysis in nanoscale materials, atomic scale imaging/analysis of interfaces.
F. Liu, L. Huang, R. Kamaladasa, Y.N. Picard, E. A. Preble, T. Paskova, K. Evans, R. F. Davis and L. M. Porter, “Site-Specific Comparisons of V-defects and Threading Dislocations in InGaN/GaN Multi-Quantum-Wells Grown on SiC and GaN Substrates” Journal of Crystal Growth, 387, 16-22 (2014).
M. Abadier, R. L. Myers-Ward, N. A. Mahadik, R. E. Stahlbush, V. D. Wheeler, L. O. Nyakiti, C. R. Eddy Jr., D. K. Gaskill, H. Song, T. S. Sudarshan, Y. N. Picard and M. Skowronski, “Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy” Journal of Applied Physics, 114, 123502 (2013).
R.J. Kamaladasa, Y. Lu, P. Salvador, J.A. Bain, M. Skowronski, Y.N. Picard, “Dislocation impact on resistive switching in single-crystal SrTiO3” Journal of Applied Physics, 113(23), 234510 (2013).
Y. Lu, M. Noman, Y.N. Picard, J.A. Bain, P.A. Salvador, M. Skowronski, “Impact of Joule heating on the microstructure of nanoscale TiO2 resistive switching devices” Journal of Applied Physics, 113(16), 163703 (2013).
C. R. Hogg, Y.N. Picard, A. Narasimhan, J. A. Bain and S. A. Majetich, “Pattern Transfer with Nanoparticle Etch Masks” Nanotechnology, 24(8) 085303 (2013).
L. Huang, F. Liu, J. Zhu, R. Kamaladasa, E.A. Preble, T. Paskova, K. Evans, L. Porter, Y.N. Picard, R.F. Davis, “Microstructure of epitaxial GaN films grown on chemomechanically polished GaN (0001) substrates” Journal of Crystal Growth, 347(1), 88-94 (2012).
W. Jiang, R.J. Kamaladasa, Y. Lu, R. Berechman, P.A. Salvador, J.A. Bain, Y.N. Picard, M. Skowronski, “Local heating-induced plastic deformation in resistive switching devices” Journal of Applied Physics, 110(5), 054514 (2011).
R.J. Kamaladasa, Y.N. Picard, “Imaging dislocations in single-crystal SrTiO3 substrates by electron channeling” Journal of Electronic Materials, 40(11), 2222-2227 (2011).
R.J. Kamaladasa, F. Liu, L.M. Porter, R.F. Davis, D.D. Koleske, G. Mulholland, K.A. Jones, Y.N. Picard, “Identifying threading dislocations in GaN films and substrates by electron channeling” Journal of Microscopy, 244(3), 311–319 (2011).