 Professor
Lisa M. Porter
Professor of Materials Science
and Engineering
Ph.D., North Carolina State; Carnegie Mellon
145 Roberts Hall
Carnegie Mellon University
Pittsburgh, PA 15213-3890
Email address:
Phone: (412) 268-4047
FAX: (412) 268-3113
Professor
Porter's Web Site |
| Professor Porter's research activities are focused
on the analysis of chemistry, microstructure,
and electrical properties of electronically-functional
interfaces. We are interested in a range
of materials including but not limited
to wide band-gap semiconductors; carbon-based
semiconductors and nanostructures; metal-semiconductor
interfaces; dielectric-semiconductor
interfaces, as for example in metal-oxide-semiconductor
(MOS) devices; and thin films. We are
also interested in a range of applications
and devices, including chemical and gas
sensors, field-effect transistors (FETs), Schottky diodes, and solar
cells. Examples of current research projects include
the development of contacts to nanostructured
carbon films; understanding the effect
of defects on Schottky and ohmic contacts to silicon carbide; characterization
of the silicon dioxide-silicon carbide interface for MOSFETs; and
the development of thermally-stable, electronically-functional interfaces
for solid-state semiconductor gas sensors. |
K.C. Chang, N.T. Nuhfer, L.M. Porter
and Q. Wahab, "High Carbon Concentrations
at the Silicon Dioxide - Silicon Carbide
Interface Identified by Electron Energy
Loss Spectroscopy," Appl. Phys.
Lett., 77 (14), 2186-2188 (2000).
T. Jang, B. Odekirk, L.D. Madsen and L.M.
Porter, "Investigation of Thermal Stability
and Contact Degradation Mechanisms of TaC
Ohmic Contacts with W/WC Overlayers to n-type
6H SiC," J. Appl. Phys. 90,
4555-4559 (2001).
T. Jang, J.W. Erickson and L.M. Porter,
"Effects of Si Interlayer Conditions
on Platinum Ohmic Contacts for p-type Silicon
Carbide," J. Electron. Mater.
31 (5), 506-511 (2002).
K.-C. Chang, L.M. Porter, J. Bentley, C.-Y.
Lu, and J. Cooper, Jr., "Electrical,
structural and chemical analysis of silicon
carbide-based metal-oxide-semiconductor
field-effect-transistors," J. Appl.
Phys. 95, 8252-8257 (2004).
L.M. Porter and F.A. Mohammad, "Review
of Issues Pertaining to the Development
of Contacts to Silicon Carbide: 1996-2002,"in
Silicon Carbide (SiC) Microelectromechanical
Systems (MEMS) for Harsh Environments,"
(Imperial College Press), in press.
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