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Professor Marek Skowronski  

Professor Marek Skowronski

Professor of Materials Science and Engineering
Ph.D., Warsaw University

Department of Materials Science and Engineering
Carnegie Mellon University
5000 Forbes Avenue
Roberts Engineering Hall 150
Pittsburgh, PA 15213-3890

Email:
Phone: (412) 268-2710
FAX: (412) 268-7596

Professor Skowronski's Web Site

 

 

Biography

Professor Skowronski obtained his Ph.D. degree in Solid State Physics from Warsaw University (Warsaw, Poland) for work on transition metal ions in semiconductors. His post-doctoral appointment was in H. C. Gatos's Electronic Materials Group at Massachusetts Institute of Technology where he investigated native point defects in GaAs. In 1986, he joined Cabot Corporation (Billerica, MA) to work on crystal growth of III-V semiconductors. In 1988, he moved to Carnegie Mellon University. His research projects covers epitaxy of semiconductors and oxide films, electron microscopy of processing and operation induced defects, and processing of electronic devices. Prof. Skowronski currently serves as Associate Editor of Journal of Crystal Growth. He has authored over 230 publications.


Research Interests

We aim to discover, understand, and exploit novel materials and phenomena that will let us manipulate charge and spin of electrons, or phase of materials. The work is motivated by applications for high-performance dense storage class-memory, ultra-low power electronics for mobile devices, nano-scale phenomena in devices, and energy scavenging and conversion. The overarching driving force for the group's research is the energy efficient electronics.

The group's research interests stretch from:
(i) electronic materials: synthesis of thin films and hetero-structures; integration of 2D materials, such as graphene, and oxide templates; in situ electron microscopy of devices under bias.
(ii) nanoscale devices such as memristors, sensors, and magnetic tunnel junctions. Heterogeneous integration of CMOS circuits and novel technologies.
(iii) condensed matter physics (in situ surface science, band structure mapping, charge and spin transport at nanoscale). The sought after materials/characteristics include half-metals with fully spin polarized electrons, quantum spin Hall insulators, and materials with Dirac massless electrons.

Most projects are highly collaborative. Ongoing collaborations include Intel, Micron, IMEC, Arizona State University and University of Michigan.


Recent Publications

"Oxygen vacancy creation, drift, and aggregation in TiO2-based resistive switches at Low temperature and voltage", J. Kwon, A. A. Sharma, J. A. Bain, Y. N. Picard and M. Skowronski, Adv. Funct. Mater. (2015) in press.

"In situ TEM imaging of defect dynamics under electrical bias in resistive switching rutile-TiO2", R. J. Kamaladasa, A. A. Sharma, Y. T. Lai, W. Chen, P. A. Salvador, J. A. Bain, M. Skowronski and Y. N. Picard, Microscopy and Microanalysis (2015) doi:10.1017/S1431927614013555.

"Electronic instabilities leading to electroformation of binary metal oxide-based resistive switches", A. A. Sharma, M. Noman, M. Adbelmoula, M. Skowronski, and J. A. Bain, Adv. Funct. Mater. 24, 5522 (2014)

"Mechanism of localized electrical conduction at the onset of electroforming in TiO2 based resistive switching devices", M. Noman, A. A. Sharma, Y. M. Lu, R. Kamaladasa, M. Skowronski, P. A. Salvador, and J. A. Bain, Appl. Phys. Lett. 104, 113510 (2014)

"Impact of Joule heating on the microstructure of nanoscale TiO2 switching devices", Y. M. Lu, M. Noman, Y. N. Picard, J. A. Bain, P. A. Salvador, and M. Skowronski, J. Appl. Phys. 113, 163703 (2013)

"Transient characterization of the electroforming process in TiO2 based resistive switching devices", M. Noman, A. A. Sharma, Y. M. Lu, M. Skowronski, P. A. Salvador, and J. A. Bain, Appl. Phys. Lett. 102, 023507 (2013)

"Elimination of high transient currents and electrode damage during electroformation of TiO2-based resistive switching devices", Y. M. Lu, M. Noman, W. Chen, P. A. Salvador, J. A. Bain, and M. Skowronski, J. Phys. D Appl. Phys. 45, 395101 (2012)


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