Professor Marek Skowronski Professor of Materials Science and Engineering Ph.D., Warsaw University Department of Materials Science and Engineering Carnegie Mellon University 5000 Forbes Avenue Roberts Engineering Hall 150 Pittsburgh, PA 15213-3890 Email: Phone: (412) 268-2710 FAX: (412) 268-7596 Professor Skowronski's Web Site

Biography

Professor Skowronski obtained his Ph.D. degrees in Solid State Physics from Warsaw University (Warsaw, Poland) in 1982 for research on optical spectroscopy of point defects in semiconductors. Shortly thereafter, he joined Massachusetts Institute of Technology as a visiting scientist to work on GaAs crystal growth and characterization. He continued this research thrust at Cabot Corporation. In 1988 he was appointed to the faculty of Department of Materials Science and Engineering at Carnegie Mellon University. Prof. Skowronski has authored over 150 technical publications and is an active member of American Association of Crystal Growth, American Physical Society, and Materials Research Society.

Research Interests

Professor Skowronski's research covers most aspects of electronic materials including: crystal growth of semiconductors; deposition of epitaxial films of metals, semiconductors, and dielectrics; processing-induced defects; and degradation phenomena in electronic devices. The unifying theme of this research is the relationships between process conditions and device performance. Prof. Skowronski's research projects attempt to balance twin goals: the demonstration of novel approaches to processing and the development of fundamental understanding of materials and processes.

Recent Publications

"Dislocation nucleation in 4H silicon carbide epitaxy", S. Ha, H.J. Chung, N.T. Nuhfer, M. Skowronski, J. Cryst. Growth 262, 130 (2004)

"The driving force of stacking fault formation in silicon carbide p-i-n diodes" S. Ha, and M. Skowronski, J. J. Sumakeris, M. J. Paisley, and M. K. Das, Phys. Rev. Lett. 92, 175504 (2004)

"Doping-induced strain and relaxation of Al-doped 4H-SiC homo-epitaxial epilayers", S. Huh, H. Chung, M. Benamara and M. Skowronski, J. J. Sumakeris, and M. J. Paisley, J. Appl. Phys. 96, 4637 (2004)

"Electrical nonuniformities and their impact on the measured electron mobility in semi-insulating SiC crystals", Q. Li, A. Y. Polyakov and M. Skowronski, J. Appl. Phys. 96, 411 (2004)

"Stacking fault formation in silicon carbide p-i-n diodes of (11-20) orientation", S. Ha, K. Hu, and M. Skowronski J. J. Sumakeris, M. J. Paisley, M. and M. K. Das, Appl. Phys. Lett. 84, 5267 (2004)