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Professor Marek Skowronski  

Professor Marek Skowronski

Professor of Materials Science and Engineering
Ph.D., Warsaw University

Department of Materials Science and Engineering
Carnegie Mellon University
5000 Forbes Avenue
Roberts Engineering Hall 150
Pittsburgh, PA 15213-3890

Email:
Phone: (412) 268-2710
FAX: (412) 268-7596

Professor Skowronski's Web Site

 

 

Biography

Professor Skowronski obtained his M. S. and Ph.D. degrees in Solid State Physics from Warsaw University (Warsaw, Poland) in 1977 and 1982 for research on optical spectroscopy of point defects in semiconductors. After a post-doctoral appointment at MIT, he joined Carnegie Mellon in 1988. Prof. Skowronski currently serves as Associate Editor of Journal of Crystal Growth and Vice-President of American Association for Crystal Growth. He has authored over 220 publications.


Research Interests

Modern electronic devices and circuits are intricately complex structures consisting of semiconductors, metals, and dielectrics and the interfaces between them.   Their performance and reliability sensitively depends not only on the design and materials selection but also the processing techniques used. Professor Skowronski's research covers a wide range of issues in this technology including: crystal growth of semiconductors; deposition of thin films of metals, semiconductors, and dielectrics; characterization of processing-induced defects; and degradation phenomena in electronic devices. The unifying theme of his research is the relationship between process conditions and device performance. Prof. Skowronski's research projects attempt to balance two distinctly different goals: the demonstration of novel approaches to processing of materials and the development of fundamental understanding of materials and devices.


Recent Publications

"Dependence of spontaneous polarization on stacking sequence in SiC revealed by local Schottky barrier height variations over a partially formed 8H-SiC layer on a 4H-SiC substrate" K. Park, H. S. Go, Y. Jeon, J. P. Pelz, X. Zhang, and M. Skowronski, Appl. Phys. Lett. 99, 252102 (2012)
 
"Trapezoid defect in 4H-SiC epilayers", R. A. Berechman, S. Chung, G. Chung, E. Sanchez, N. A. Mahadik, R. E. Stahlbush, and M. Skowronski, J. Crystal Growth 338, 16 (2012)
 
"Local heating-induced plastic deformation in resistive switching devices" W. Jiang, R. J. Kamaladasa, Y. M. Lu, A. Vicari, R. Berechman, P. A. Salvador, J. A. Bain, Y. N. Picard, and M. Skowronski, J. Appl. Phys. 110, 054514 (2011)
 
"Mobility of oxygen vacancy in SrTiO3 and its implications for oxygen-migration-based resistance switching", W. Jiang, M. Noman, Y. M. Lu, J. A. Bain, P. A. Salvador, and M. Skowronski, J. Appl. Phys. 110, 034509 (2011)
 
"Secondary electron dopant contrast imaging of compound semiconductor junctions", S. Chung, V. Wheeler, R. Myers-Ward, D. K. Gaskill, M. Skowronski and Y. N. Picard, J. Appl. Phys. 110, 014902 (2011)
 
"Direct observation of basal-plane to threading edge dislocation conversion in 4H-SiC epitaxy", S. Chung, V. Wheeler, R. Myers-Ward, C. R. Eddy, D. K. Gaskill, P. Wu, Y. N. Picard and M. Skowronski, J. Appl. Phys. 109, 094906 (2011)
 
“Thermographic analysis of localized conductive channels in bipolar resistive switching devices”, Y. M. Lu, W. K. Jiang, M. Noman, J. A. Bain, P. A. Salvador, and M. Skowronski, J. Phys. D Appl. Phys. 44, 185103 (2011)
 
“Electronic structure analysis of threading screw dislocations in 4H-SiC using electron holography” S. Chung, R. A. Berechman, M. R. McCartney, and M. Skowronski, J. Appl. Phys. 109, 034906 (2011)

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