Publications  
  1. L. M. Spellman (Porter), R. C. Glass, R. F. Davis, T. P. Humphreys, R. J. Nemanich, K. Das, and S. Chevacharoenkul, “Electrical Characterization of Epitaxial Titanium Contacts to Alpha (6H) Silicon Carbide,” (presented at the Fourth International Conference on Amorphous and Crystalline Silicon Carbide, Santa Clara, CA, 1991) in C. Y. Yang, M. M. Rahman, and G. L. Harris (eds.), Springer Proceedings in Physics, Vol. 71: Amorphous and Crystalline Silicon Carbide IV, Springer-Verlag, pp. 417-422.
  2. R. C. Glass, L. M. Spellman (Porter), and R. F. Davis, “Low energy ion-assisted deposition of titanium nitride ohmic contacts on alpha (6H)-silicon carbide,” Appl. Phys. Lett. 59 (22), 2868-2870 (1991).
  3. L. M. Spellman (Porter), R. C. Glass, R. F. Davis, T. P. Humphreys, H. Jeon, R. J. Nemanich, S. Chevacharoenkul, and N. R. Parikh, “Heteroepitaxial Growth and Characterization of Titanium Films on Alpha (6H) Silicon Carbide,” Mat. Res. Soc. Symp. Proc. 221, 99-104 (1991).
  4. R. C. Glass, L. M. Spellman (Porter), S. Tanaka, and R. F. Davis, “Chemical and structural analyses of the titanium nitride/alpha (6H)-silicon carbide interface,” J. Vac. Sci. Technol. A 10 (4), 1625-1630 (1992).
  5. L. M. Porter, R. C. Glass, R. F. Davis, J. S. Bow, M. J. Kim, and R. W. Carpenter, “Chemical and electrical mechanisms in titanium, platinum and hafnium contacts to alpha (6H) silicon carbide,” Mat. Res. Soc. Symp. Proc. 282, 471-477 (1993).
  6. L.M. Porter, R.F. Davis, J.S. Bow, M.J. Kim, and R.W. Carpenter, “Deposition and characterization of Schottky and ohmic contacts on n-type alpha (6H)-SiC (0001),”(presented at the Fifth International Conference on Silicon Carbide and Related Materials, Washington, D.C., 1993) in M.G. Spencer et al. (eds.), Institute of Physics Conference Series, Vol. 137: Silicon Carbide and Related Materials, Institute of Physics Publishing, pp. 581-584.
  7. J. S. Bow, L. M. Porter, M. J. Kim, R. W. Carpenter, and R. F. Davis, “Thin film Ti/6H-SiC interfacial reaction: high spatial resolution electron microscopy study,” Ultramicroscopy 52, 289-296 (1993).
  8. J.S. Bow, L.M. Porter, M.J. Kim, R.W. Carpenter, and R.F. Davis, “High spatial reso-lution TEM study of thin film metal/6H-SiC interfaces,” Mat. Res. Soc. Symp. Proc. 280, 571-576 (1993).
  9. L.M. Porter, J.S. Bow, M.J. Kim, R.W. Carpenter, and R.F. Davis, “Characterization of contacts to n- and p-type alpha (6H) silicon carbide (0001),” Trans. Of the Second Int. High Temperature Electronics Conf., Charlotte, N.C., June 1994, p. XIII-3.
  10. C. Raynaud, F. Ducroquet, G. Guillot, L. M. Porter, and R. F. Davis, “Determination of ionization energies of the nitrogen donors in 6H-SiC by admittance spectroscopy,” J. Appl. Phys. 76 (3), 1956-1958 (1994).
  11. P. K. Baumann, T. P. Humphreys, R. J. Nemanich, K. Ishibashi, N. R. Parikh, L. M. Porter, and R. F. Davis, “Epitaxial Cu contacts on semiconducting diamond,” Diamond and Related Materials 3, 883-886 (1994).
  12. L. M. Porter, J. S. Bow, M. J. Kim, R. W. Carpenter, and R. F. Davis, “Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001),” J. Mater. Res. 10 (1), 26-33 (1995).
  13. C. Raynaud, C. Richier, P. N. Brounkov, F. Ducroquet, G. Guillot, L. M. Porter, R. F. Davis, C. Jaussaud, and T. Billon, “Determination of donor and acceptor level energies by admittance spectroscopy in 6H-SiC,” Mater. Sci. Eng. B 29, 122-125 (1995).
  14. F. Gendron, L. M. Porter, C. Porte, and E. Bringuier, “Hydrogen passivation of donors and acceptors in SiC,” Appl. Phys. Lett. 67 (9), 1253-1255 (1995).
  15. L. M. Porter, J. S. Bow, M. J. Kim, R. W. Carpenter, R. C. Glass, and R. F. Davis, “Chemistry, microstructure, and electrical properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001),” J. Mater. Res. 10 (3), 668-679 (1995).
  16. L. M. Porter, J. S. Bow, M. J. Kim, R. W. Carpenter, and R. F. Davis, “Chemistry, microstructure, and electrical properties at interfaces between thin films of platinum and alpha (6H) silicon carbide (0001),” J. Mater. Res. 10 (9), 2336-2342 (1995).
  17. L. M. Porter and R. F. Davis, “A critical review of ohmic and rectifying contacts for silicon carbide,” Mater. Sci. Eng. B 34, 83-105 (1995).
  18. C. Raynaud, F. Ducroquet, P. N. Brounkov, G. Guillot, L. M. Porter, R. F. Davis, C. Jaussaud, and T. Billon, “Electrical characterization of epitaxial 6H-SiC by admittance spectroscopy,” Mater. Sci. Technol. 12, 94-97 (1996).
  19. M.J. Powers, M.C. Benjamin, L.M. Porter, R.J. Nemanich, R.F. Davis, and J.J. Cuomo, “Observation of a negative electron affinity for boron nitride,” Appl. Phys. Lett., 67 (26), 3912-3914 (1996).
  20. L.M. Porter and R.F. Davis, “Issues and Status of Ohmic Contacts for p-type Silicon Carbide,” Trans. Third International High Temperature Electronics Conf., Vol. 1 (1996).
  21. J. Crofton, L. M. Porter, and J. R. Williams, “The physics of ohmic contacts to SiC”, Phys. Stat. Sol. (b) 202, 581-603 (1997).
  22. T. Jang and L.M. Porter, “Electrical Characteristics of Tantalum and Tantalum Carbide Schottky Diodes on n- and p-type Silicon Carbide as a Function of Temperature,” Trans. of the Fourth High Temperature Electronics Conf., Albuquerque, N.M., June 1998.
  23. A. Teicher, D.L. Meier, and L.M. Porter, “Investigation of Undoped and Phosphorus-doped Silver-based Pastes for Self-doping Ohmic Contacts to Silicon for Solar Cell Applications,” Proc. of the 9th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Breckenridge, CO, Aug. 1999.
  24. T. Jang, G.W.M. Rutsch, B. Odekirk and L.M. Porter, “Tantalum Carbide Ohmic Contacts to n-type Silicon Carbide,” Appl. Phys. Lett., 75 (25), 3956-3958 (1999).
  25. T. Jang, G. Rutsch, B. Odekirk and L.M. Porter, “A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-type and Osmium on p-type Silicon Carbide at Elevated Temperatures,” Mater. Sci. Forum, Vols. 338-342, 1001-1004 (2000).
  26. K.C. Chang, N.T. Nuhfer, L.M. Porter and Q. Wahab, “High Carbon Concentrations at the Silicon Dioxide – Silicon Carbide Interface Identified by Electron Energy Loss Spectroscopy,” Appl. Phys. Lett., 77 (14), 2186-2188 (2000).
  27. L.M. Porter, T. Jang, T. Worren, K.C. Chang, N.A. Papanicolaou, and J.W. Erickson, “Effects of Surface and Interlayer Processing Conditions on Selected Ohmic Contact Metallizations for p-type Silicon Carbide,” in Silicon Carbide – Materials, Processing and Devices (Materials Research Society, Warrendale, PA, 2001) p. H7.1.
  28. T. Jang, B. Odekirk, and L.M. Porter, “Investigation of Factors Limiting the High Temperature Stability of W/WC/TaC/SiC Ohmic Contacts to n-type 6H-SiC,” in Silicon Carbide – Materials, Processing and Devices (Materials Research Society, Warrendale, PA, 2001) p. H7.4.
  29. K.C. Chang, Q. Wahab, and L.M. Porter, “Observation of a Non-stoichiometric Layer at the Silicon Dioxide – Silicon Carbide Interface: Effect of Oxidation Temperature and Post-Oxidation Processing Conditions,” in Silicon Carbide – Materials, Processing and Devices (Materials Research Society, Warrendale, PA, 2001) p. H5.45.
  30. T. Jang, B. Odekirk, L.D. Madsen and L.M. Porter, “Investigation of Thermal Stability and Contact Degradation Mechanisms of TaC Ohmic Contacts with W/WC Overlayers to n-type 6H SiC,” J. Appl. Phys. 90, 4555-4559 (2001).
  31. L.M. Porter, A. Teicher and D.L. Meier, “Phosphorus-Doped, Silver-Based Pastes for Self-Doping Ohmic Contacts for Crystalline Silicon Solar Cells,” Solar Energy Materals and Solar Cells, 73 (2), 209-219 (2002).
  32. T. Jang, J.W. Erickson and L.M. Porter, “Effects of Si Interlayer Conditions on Platinum Ohmic Contacts for p-type Silicon Carbide,” J. Electron. Mater. 31 (5), 506-511 (2002).
  33. O. Shigiltchoff, T. Kimoto, D. Hobgood, P.G. Neudeck, L.M. Porter, R.P. Devaty and W.J. Choyke, “Schottky Barriers for Pt on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission,” (presented at the Int. Conf. on Silicon Carbide and Rel. Mater., Tskuba, Japan, Oct. 2001), Mater. Sci. Forum, Vols. 389-393, pp. 921-924 (2002).
  34. O. Shigiltchoff, S. Bai, R.P. Devaty, W.J. Choyke, T. Kimoto, D.Hobgood, P.G. Neudeck and L. M. Porter, “Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission,” to be published in Proc. of the European Conf. on Silicon Carbide and Rel. Mater., Linköping, Sweden, Sept. 2002.
  35. S. Bai, Y. Ke, Y. Shishkin, O. Shigiltchoff, R.P. Devaty, W.J. Choyke, D. Strauch, B. Stojetz, B. Dorner, D. Hobgood, J. Serrano, M. Cardona, H. Nagasawa, T. Kimoto and L.M. Porter, “Four Current Examples of Characterization of Silicon Carbide,” in Silicon Carbide – Materials, Processing and Devices (Materials Research Society, Warrendale, PA) Vol. 742, p. K3.1 (2003).
  36. Aravind Asthagiri, Christoph Niederberger, Andrew J. Francis, Lisa M. Porter, Paul A. Salvador, and David S. Sholl, “Thin Pt films on the polar SrTiO3(111) surface: an experimental and theoretical study,” Surf. Sci., 537, 134 -152 (2003).
  37. K.-C. Chang, J. Bentley and L.M. Porter, “Nanoscale characterization of the silicon dioxide – silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy,” J. Electron. Mater., 32, 464-469 (2003).
  38. L.M. Porter and F.A. Mohammad, “Review of Issues Pertaining to the Development of Contacts to Silicon Carbide: 1996–2002,”in Silicon Carbide (SiC) Microelectromechanical Systems (MEMS) for Harsh Environments,” (Imperial College Press), in press.
  39. K.-C. Chang, L.M. Porter, J. Bentley, C.-Y. Lu, and J. Cooper, Jr., “Electrical, structural and chemical analysis of silicon carbide-based metal-oxide-semiconductor field-effect-transistors,” J. Appl. Phys., 95, 8252-8257 (2004).
  40. S. Dhar, L.C. Feldman, K.-C. Chang, Y. Cao, L.M. Porter, J. Bentley, and J.R. Williams, “Nitridation anisotropy in SiO2/4H-SiC,” J. Appl. Phys. 97, 074902.1 – 07902.6 (2005).
  41. K.-C. Chang, Y. Cao, L. M. Porter, J. Bentley, S. Dhar, L.C. Feldman , and J.R. Williams, “High Resolution Elemental Profiles of the Silicon Dioxide/4H-Silicon Carbide Interface,” J. Appl. Phys. 97, 104920.1-104920.6 (2005).
  42. F. A. Mohammad, Y. Cao, K.-C. Chang and L. M. Porter, “Comparison of Pt-based Ohmic Contacts with Ti-Al Ohmic Contacts for p-type SiC,” Jpn. J. Appl. Phys. 44, 5933-5938 (2005).
  43. F.A. Mohammad and L.M. Porter, “Ohmic Contacts to Silicon Carbide Determined by Changes in the Surface,” Appl. Phys. Lett. 87, 161908.1-161908.3 (2005).
  44. K.R. Balasubramanian, F.A. Mohammad, K.-C. Chang, L.M. Porter, P.A. Salvador, P.Q. Miraglia, and R.F. Davis, “Structural Investigations of Hexagonal YMnO3 Thin Films Synthesized on Wurtzite GaN(001),” to be published in Thin Solid Films.
  45. D.J. Ewing, Q. Wahab, S. Tumakha, L.J Brillson, X. Ma, T.S. Sudarshan, and L.M. Porter, “A Study of Inhomogeneous Schottky Diodes on N-Type 4H-SiC,” to be published in the Proc. of the International Conference on Silicon Carbide and Related Materials, Pittsburgh, PA, September 2005.
  46. S. Tumakha, L.J. Brillson, D.J. Ewing, L.M. Porter, Q. Wahab, X. Ma, and T.S. Sudarshan, “Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes,” to be published in the Proc. of the International Conference on Silicon Carbide and Related Materials, Pittsburgh, PA, September 2005.
  47. S.T. Pantelides, S. Wang, A. Franceschetti, R. Buczko, M. Di Ventra, S.N. Rashkeev, L. Tsetseris, M.H. Evans, I.G. batyrev, L.C. Feldman, S. Dhar, K. McDonald, R.A. Weller, R.D. Schrimpf, D.M. Fleetwood, X.J. Zhou, J.R. Williams, C.C. Tin, G.Y. Chung, T. Isaacs-Smith, S.R. Wang, S.J. Pennycook, G. Duscher, K. Van Benthem, L.M. Porter, and J.A. Cooper, Jr., “Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances,” to be published in the Proc. of the International Conference on Silicon Carbide and Related Materials, Pittsburgh, PA, September 2005.
  48. S. Tumakha, D.J. Ewing, L.M Porter, Q. Wahab, X. Ma, T.S. Sudarshan, and L.J. Brillson, “Defect-Driven Inhomogeneities in Ni/4H-SiC Schottky Barriers,” Appl. Phys. Lett. 87, 242106.1-242106.3 (2005).
  49. L.M. Porter, “Thermal Stability and Defects in Contacts to Silicon Carbide,” in Wide Band Gap Materials and New Developments, Research Signpost, Kerala, India, in press.
  50. D.J. Ewing, L.M. Porter, Q. Wahab, X. Ma, T.S. Sudharshan, S. Tumakha, M. Gao, and L.J. Brillson, “Inhomogeneities in Ni/4H-SiC Schottky Barriers: Localized Fermi-Level Pinning by Defect States,” submitted to J. Appl. Phys.
  51. F.A. Mohammad, Y. Cao, and L.M. Porter, “Characterization of Epitaxial Indium Nitride Interlayers for Ohmic Contacts to Silicon Carbide,” submitted to J. Electron. Mater.

Patent

  1. R.C. Glass, J. W. Palmour, R. F. Davis, and L. M. Porter, “Platinum ohmic contact to p-type silicon carbide”, U.S. Patent No. 5,323,022, April 25, 1995.