Silicon Carbide Growth and Characterization

• Growth of silicon carbide
• Crystal structure of perfect SiC polytypes
• Hexagonal SiC unit cell
• Locations of atoms in 2H-SiC unit cell
• Stacking sequences in different SiC polytypes
• Extended defects in SiC boules and wafers
• Wafer maps
• Elementary screw dislocations
• Micropipes
• Basal plane dislocations
• Threading edge dislocations
1. Morphology
2. Sources of threading edge dislocations
• Low angle grain boundaries
1. LAGB problem
2. Pure tilt boundaries around c-axis
• Hexagonal void defects
1. Void morphology
2. Void nucleation and motion
3. Dislocation and micropipe formation
• Nucleation-induced stacking faults
• Polishing-related damage in SiC wafers

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