Research opportunities in SiC group:

 

  1. Post-doctoral opening in High Temperature Chemical Vapor Deposition of silicon carbide bulk crystals and epilayers.  We will modify an existing Thomas Swan CVD system by replacing current deposition chamber with two vertical reactors capable of deposition in the 1800-2200 oC range.  The research objectives will include control of stoichiometry of the growth ambient, growth of epilayers at high growth rates, and mapping out SiC polytype stability range.  Position open immediately.
  1. Post-doctoral opening in growth of semi-insulating silicon carbide boules by sublimation method. We will map out the residual impurity content in SiC crystals as a function of hot zone materials and growth parameters.  Utra-pure crystals will be intentionally doped with variety of dopants and their effect on crystal properties will be assessed by conductivity and junction spectroscopy techniques.  Position open immediately.

 

Graduate students openings are available almost every year.  Admission decisions are made by Department’s Admission Committee.  Please consult MSE Graduate Admission Page. 

 

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