Publications since 1990:

  1. “Formation of thermal decomposition cavities in Physical Vapor Transport of silicon carbide”, E. K. Sanchez, T. A. Kuhr, V. D. Heydemann, D. W. Snyder, G. S. Rohrer, and M. Skowronski, J. Electron. Mater. 29, 347 (2000)
  2. “Identification of prismatic slip bands in 4H SiC boules grown by Physical Vapor Transport”, S. Ha, N. T. Nuhfer, G. S. Rohrer, M. De Graef, and M. Skowronski, J. Electron. Mater. 29, L5 (2000)
  3. “Origin of domain structure in hexagonal silicon carbide boules grown by the physical vapor transport method” J. Cryst. Growth 220, 308 (2000)
  4.  “Thermal decomposition cavities in Physical Vapor Transport grown SiC”, E. K. Sanchez, V. D. Heydemann, D. W. Snyder, G. S. Rohrer, and M. Skowronski, Mater. Sci. Forum 338-342, 55 (2000)
  5. “Nucleation of dislocations during Physical Vapor Transport growth of silicon carbide”, E. K. Sanchez, V. D. Heydemann, D. W. Snyder, G. S. Rohrer, and M. Skowronski, Mater. Sci. Forum 338-342, 63 (2000)
  6. “Plastic deformation and residual stresses in SiC boules grown by PVT”, S. Ha, G. S. Rohrer, M. Skowronski, V. D. Heydemann, and D. W. Snyder, Mater. Sci. Forum 338-342, 67 (2000)
  7. “Origin of threading dislocation arrays in SiC boules grown by PVT” S. Ha, N. T. Nuhfer, M. De Graef, G. S. Rohrer, and M. Skowronski, Mater. Sci. Forum 338-342, 477 (2000)
  8.  “X-ray Characterization of 3 inch Diameter Experimental 4H-SiC Wafers”, T. A. Kuhr, M. Skowronski, W. M. Vetter, and M. Dudley, Mater. Sci. Forum 338-342, 473 (2000)
  9. “Evidence for localized Si-donor state and its metastable properties in AlGaN” C. Skierbiszewski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 74, 3833 (1999)
  10. “The mechanism of micropipe nucleation at inclusions in silicon carbide” M. Dudley, X. R. Huang, W, Huang, A, Powell, S. Wang, P. Neudeck, M. Skowronski, Appl. Phys. Lett. 75, 784 (1999)
  11. “GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations” A. R. Smith, R. M. Feenstra, D. W. Greve, M. S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, Surface Sci. 423, 70 (1999)
  12. “Inhomogeneities and defects in GaN and AlGaN epitaxial  layers studied by SEM”A. V. Govorkov, A. Y. Polyakov, N. B. Smirnov, J. M.  Redwing, M. Skowronski, M. Shin, Bulletin of the Russian Academy of Sciences. Physics, 62, 380 (1998)
  13. “Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC” A. R. Smith, V. Ramachandran, R. M. Feenstra, D. W. Greve, J. Neugebauer, J. E. Northrup, M. Shin, and M. Skowronski, Mat. Res. Soc. Symp. Proc 482, 363 (1998)
  14. “Schottky diodes on MOCVD grown AlGaN films” A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, D. W.  Greve, M. Skowronski, M. Shin, and J. M. Redwing, J.M. MRS Internet Journal of Nitride Semiconductor Research, 3 (1998)
  15. ”Surface reconstruction during molecular beam epitaxial growth of GaN (0001)”A. R. Smith, V. Ramachandran, R. M. Feenstra, D. W. Greve, A. Ptak, T. Myers, W. Sarney, L. Salamanca-Riba, M. Shin, and M.Skowronski, MRS Internet Journal of Nitride Semiconductor Research 3 (1998)
  16. "Determination of wurtzite GaN lattice polarity based on surface reconstruction" A. R. Smith, R. J. Feenstra, D. W. Greve, M. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, Appl. Phys. Lett. 72, 2114 (1998)
  17. "Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction" A. R. Smith, V. Ramachandran, R. M. Feenstra, D.W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, J. Vac. Sci Technol. A 16, 1641 (1998)
  18. “Microstructure and optical properties of epitaxial GaN on ZnO(0001) grown by reactive molecular beam epitaxy”, F. Hamadani, M. Yeadon, D. J. Smith, H. Tang, W. Kim, A. Salvador, A. E. Botchkarev, J. M. Gibson, A. Y. Polyakov, M. Skowronski, and H. Morkoc, J. Appl. Phys. 83, 983 (1998)
  19. “The formation of super-dislocations / micropipe complexes in 6H-SiC”, J. Giocondi, G. S. Rohrer, M. Skowronski, V. Balakrishna, H. M. Hobgood, and R. H. Hopkins, Materials Science Forum, 264-268, 371 (1998)
  20. “Surface defects in GaN and AlxGa1-xN epilayers deposited on sapphire by organometallic vapor phase epitaxy”, M. Shin, A. Y. Polyakov, M. Skowronski, G. S. Rohrer, and R. G. Wilson, Materials Science Forum 264-268, 1251 (1998)
  21. “The structural evolution of Lely seeds during the initial stages of SiC sublimation growth”, V. D. Heydemann, E. K. Sanchez, G. S. Rohrer, M. Skowronski Materials Sci. Forum 264-268, 37 (1998)
  22. “Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, M. Shin, M. Skowronski, and D. W. Greve, J. Appl. Phys. 84, 870 (1998)
  23. “Properties of Si donors and persistent photoconductivity in AlGaN”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, M. G. Milvidskii, J. M. Redwing, M. Shin, M. Skowronski, D. W. Greve, and R. G. Wilson, Solid-State Electronics 42, 627 (1998)
  24. “The structural evolution of seed surfaces during the initial stages of Physical Vapor Transport SiC growth”, V. D. Heydemann, E. Sanchez, G. S. Rohrer, and M. Skowronski, Mat. Res. Soc. Symp. Proc. 483, 295 (1998)
  25. “ICP dry etching of III-V nitrides”, C. B. Vartuli, J. W. Lee, J. D. McKenzie, S. M. Donovan, C. R. Abernathy, S. J. Pearton, R. J. Shul, C. Constantine, C. Barrat, A. Katz, A. Y. Polyakov, M. Shin, and M. Skowronski, Mat. Res. Soc. Symp. Proc. 483, 295 (1998)
  26. “Reconstructions of GaN(0001) and (000-1) surfaces: Ga-rich metallic structures”, A. R. Smith, R. M. Feenstra, D. W. Greve, M. S. Shin, M. Skowronski, J, Neugebauer, J. E. Northrop, J. Vac. Sci. Technol. B 16, 2242 (1998)
  27. “Scanning electron microscope studies of AlGaN films grown by organometallic vapor phase epitaxy” A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, M. G. Milvidskii, J. M. Redwing, M. Shin, M. Skowronski, and D. W. Greve, Solid-State Electronics 42, 637 (1998)
  28. “Structural characterization of SiC crystals grown by Physical Vapor Transport”, E. Sanchez, V. D. Heydemann, G. S. Rohrer, M. Skowronski, J. Solomon, M. A. Capano, and W. C. Mitchel, Materials Sci. Forum 264-268, 433 (1998)
  29. “Combined lattice parameter mapping and x-ray topography of SiC substrates” C. D. Moore, M. S. Goorsky, and M. Skowronski, Proc. Int. Conf. on X-ray characterization of Materials, Durham, England, 1998
  30. “Metastable behavior of Si-donor in AlGaN”, C. Skierbiszewski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M. D. Bremser, and R. F. Davis, Proc. Int. Conf. on Physics of Semiconductors, Jerusalem 1998
  31. "Growth of AlBN solid solutions by organometallic vapor-phase epitaxy", A. Y. Polyakov, M. Shin, M. Skowronski, D. W. Greve, and R. G. Wilson, J. Appl. Phys. 81, 1715 (1997)
  32. "HRTEM characterization of 6H-15R polytype boundaries in silicon carbide grown by physical vapor transport", E. K. Sanchez, M. De Graef, W. Qian, and M. Skowronski, Mat. Res. Soc. Symp. Proc. 442, 655 (1997)
  33. "Studies of electrically and recombination active centers in undoped GaN grown by OMVPE", A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, M. Shin, M. Skowronski, and D. W. Greve, Mat. Res. Soc. Symp. 449, 591 (1997)
  34. "Growth of AlBN solid solution by OMVPE" M. Shin, A. Y. Polyakov, W. Qian, M. Skowronski, D. W. Greve, and R. G. Wilson, Mat. Res. Soc. Symp. 449, 141 (1997)
  35. “Nucleation of misfit and threading dislocations during epitaxial growth of GaSb on GaAs(001) substrates” W. Qian, M. Skowronski, R. Kaspi, M. De Graef, and V. P. Dravid, J. Appl. Phys. 81, 7268 (1997)
  36. “Growth of GaBN ternary solutions by Organometallic Vapor Phase Epitaxy” A. Y. Polyakov, M. Shin, M. Skowronski, D. W. Greve, R. G. Wilson, A. V. Govorkov, R. M. Derosiers, J. Electron. Materials 26, 237 (1997)
  37. "High resolution x-ray diffraction analysis of GaN-based heterostructures grown by OMVPE" M. S. Goorsky, A. Y. Polyakov, M. Skowronski, M. Shin, and D. W. Greve, Mat. Res. Soc. Symp. 449, 489 (1997)
  38. “Ion implantation of Si, Mg, and C into Al0.12Ga0.88N” A. Y. Polyakov, M. Shin, M. Skowronski, R. G. Wilson, D. W. Greve, and S. J. Pearton, Solid-State Electronics 41, 703 (1997)
  39. “Dislocation density reduction in GaSb films grown on GaAs substrates by Molecular Beam Epitaxy” W. Qian, M. Skowronski, and R. Kaspi, J. Electrochem. Soc. 144, 1430 (1997)
  40. “Growth of AlBN solid solutions by organometallic vapor-phase epitaxy” A. Y. Polyakov, M. Shin, W. Qian, M. Skowronski, D. W. Greve, and R. G. Wilson, J. Appl. Phys. 81, 1715 (1997)
  41. “An atomic force microscopy study of super-dislocation / micropipe complexes on the 6H-SiC(0001) growth surface” J. Giocondi, G. S. Rohrer, M. Skowronski, V. Balakrishna, G. Augustine, H. M. Hobgood, and R. H. Hopkins, J. Crystal Growth 181, 351 (1997)
  42. "The role of residual impurities in SiC grown by physical vapor transport" R. C. Glass, G. Augustine, V. Balakrishna, H. Mc. Hobgood, R. H. Hopkins, J. Jenny, M. Skowronski, and W. J. Choyke, Inst. Phys. Conf. Ser. 142, 37 (1996)
  43. "Electronic properties of semi-insulating vanadium-doped 6H-SiC" W. C. Mitchel, M. Roth, A. O. Evwaraye, P. W. Yu, S. R. Smith, J, Jenny, M. Skowronski, H. McD. Hobgood, R. C. Glass, G. Augustine, R. H. Hopkins, Inst. Phys. Conf. Ser. 142, 313 (1996)
  44. "Optical and electrical characterization of boron impurities in silicon carbide grown by physical vapor transport" J. R. Jenny, M. Skowronski, W. C. Mitchel, H. M. Hobgood, R. C. Glass, G. Augustine, and R. H. Hopkins, J. Appl. Phys. 79, 2326 (1996)
  45. "Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC" J. R. Jenny, M. Skowronski, W. C. Mitchel, H. M. Hobgood, R. C. Glass, G. Augustine, and R. H. Hopkins, Appl. Phys. Lett. 68, 1963 (1996)
  46. "Nucleation of misfit and threading dislocations in GaSb/GaAs(001) heterostructure" W. Qian, M. Skowronski, R. Kaspi, and M. DeGraef, Proc. Microscopy and Microanalysis 1996, ed. G. W. Bailey, J. M. Corbett, R. V. W. Dimlich, J. R. Michael, and N. J. Zaluzec, San Francisco Press, San Francisco, 1996
  47. "A microscopic evaluation of the surface structure of OMVPE deposited a-GaN epilayers" G. S. Rohrer, J. Payne, W. Qian, M. Skowronski, K. Doverspike, L. B. Rowland, and D. K. Gaskill, Mat. Res. Soc. Symp. Proc. 395, 381 (1996)
  48. "Structural defects and their relationship to nucleation of GaN thin films" W. Qian, M. Skowronski, and G. S. Rohrer, Mat. Res. Symp. Proc. 423, 475 (1996)
  49. "Electrical and optical investigation of the position of vanadium related defects in the 4H and 6H SiC bandgaps" J. R. Jenny, M. Skowronski, W. C. Mitchel, S. R. Smith, A. O. Evwaraye, H. M. Hobgood, G. Augustine, and R. H. Hopkins, Mat. Res. Symp. Proc. 423, 507 (1996)
  50. "The relationship between micropipes and screw dislocations in PVT grown 6H-SiC" J. Giocondi, G. S. Rohrer, M. Skowronski, V. Balakrishna, G. Augustine, H. M. Hobgood, and R. H. Hopkins, Mat. Res. Symp. Proc. 423, 539 (1996)
  51. "Factors influencing the electrical and optical properties of AlGaN layers on sapphire" M. Shin, A. Y. Polyakov, M. Skowronski, D. W. Greve, R. G. Wilson, J. A. Freitas, Mat. Res. Symp. Proc. 423, 643 (1996)
  52. "The influence of hydrogen plasma on electrical and optical properties of AlGaN samples grown on sapphire" A. Y. Polyakov, M. Shin, S. J. Pearton, M. Skowronski, D. W. Greve, and  J. A. Freitas, Mat. Res. Soc. Symp. Proc. 423, 607 (1996)
  53. "On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy" A. Y. Polyakov, M. Shin, J. A. Freitas, M. Skowronski, D. W. Greve, and R. G. Wilson, J. Appl. Phys. 80, 6349 (1996)
  54. "High resistivity AlxGa1-xN layers grown by MOCVD" A. Y. Polyakov, M. Shin, D. W. Greve, M. Skowronski, and R. G. Wilson, MRS Internet Journal, Nitride Semiconductor Research, vol. 1, art 36 (1996)
  55. "Precipitation of second phases in heavily doped dimethyltellurium-doped GaAs during OMVPE growth" Y. Park, W. Qian, and M. Skowronski, J. Electrochem. Soc. 142, 4294 (1995)
  56. "Characterization of polishing-related surface damage in (0001) silicon carbide substrates" W. Qian, M. Skowronski, G. Augustine, R. C. Glass, H. M. Hobgood, and R. H. Hopkins, J. Electrochem. Soc. 142, 4290 (1995)
  57. "Surfactant-mediated growth of AlGaAs by molecular beam epitaxy" R. Kaspi, D. C. Reynolds, K. R. Evans, J. Brown, and M. Skowronski, Mat. Res. Soc. Symp. Proc. 379, 79 (1995)
  58. "Dynamics of surface segregation during InGaAs MBE" K. R. Evans, R. Kaspi, J. E. Ehret, and M. Skowronski, Mat. Res. Soc. Symp. Proc. 379, 505 (1995)
  59. "Electronic properties of boron in p-type bulk 6H-SiC" W. C. Mitchel, M. Roth, E. O. Evwaraye, P. W. Yu, S. R. Smith, J. R. Jenny, and M. Skowronski, Proceedings of Workshop on High Temperature Electronics and Electrical Vehicles, Fort Monmouth, NJ, 1995
  60. "Atomic structure of deep level defects in dimethylaluminum methoxide-doped GaAs" Y. Park and M. Skowronski, Mat. Res. Soc. Symp. Proc., 378, 159 (1995)
  61. "Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high resolution transmission electron microscopy" W. Qian, G. S. Rohrer, M. Skowronski, K. Doverspike, L. B. Rowland, and D. K. Gaskill, Appl. Phys. Lett. 67, 2284 (1995)
  62. "On the compensation mechanism in high-resistivity 6H-SiC doped with vanadium" J. R. Jenny, M. Skowronski, W. C. Mitchel, H. M. Hobgood, R. C. Glass, G. Augustine, and R. H. Hopkins, J. Appl. Phys. 78, 3839 (1995)
  63. "TEM and AFM studies of structural defects in a-GaN films" W. Qian, M. Skowronski, M. De Graef, G. Rohrer, K. Doverspike, L. B. Rowland, and D. K. Gaskill, Proc. Microscopy and Microanalysis 1995, ed. G. W. Bailey, M. H. Ellisman, R. A. Hennigar, and N. J. Zaluzec, p. 456, Jones and Begell Publishing, New York, 1995
  64. "TEM characterization of subsurface damage in silicone carbide substrates" W. Qian, M. Skowronski, G. Augustine, R. C. Glass, H. Mc. Hobgood, and R. H. Hopkins, Proc. Microscopy and Microanalysis 1995, ed. G. W. Bailey, M. H. Ellisman, R. A. Hennigar, and N. J. Zaluzec, p. 474, Jones and Begell Publishing, New York, 1995
  65. "Vanadium related near-band-edge absorption bands in three SiC polytypes" J. R.. Jenny, M. Skowronski, W. C. Mitchel, H. M. Hobgood, R. C. Glass, G. Augustine, and R. H. Hopkins, J. Appl. Phys. 78, 3160 (1995)
  66. "Surface chemistry evolution during MBE growth of InGaAs" K. R. Evans, R. Kaspi, J. E. Ehret, M. Skowronski, and C. R. Jones, J. Vac. Sci. Technol. B 13, 1820 (1995)
  67. "Pressure as a probe of deep levels and defects in semiconductors: antisites and oxygen centers in GaAs" G. A. Samara, M. Skowronski, and W. C. Mitchel, J. Phys. Chem. Solids 56, 625 (1995)
  68. "Deep-center oxygen related photoluminescence in GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy" P. Yu, Y. Park, M. Skowronski, and M. L. Timmons, J. Appl. Phys. 78, 2015 (1995)
  69. "Observation of nanopipes in a-GaN crystals" W. Qian and M. Skowronski, K. Doverspike, L. B. Rowland and D. K. Gaskill, J. Cryst. Growth 151, 396 (1995)
  70. "Semi-insulating 6H-SiC grown by physical vapor transport" H. M. Hobgood, R. C. Glass, G. Augustine, R. H. Hopkins, J. Jenny, M. Skowronski, W. C. Mitchel, and M. Roth, Appl. Phys. Lett. 66, 1364 (1995)
  71. "Microstructural characterization of a-GaN films grows on Sapphire by Organometallic Vapor Phase Epitaxy" W. Qian,  M. Skowronski, M. De Graef , K. Doverspike, L. B. Rowland and D. K. Gaskill, Appl. Phys. Lett. 66, 1252 (1995)
  72. "Incorporation of aluminum and oxygen in dimethylaluminum methoxide doped GaAs during organometallic vapor phase epitaxy" Y. Park, M. Skowronski, and T. M. Rosseel, J. Cryst. Growth 137, 442 (1994)
  73. "Mechanism for CuPt-type ordering in mixed III-V epitaxial layers" B. A. Philips, A. G. Norman, T. Y. Seong, S. Mahajan, G. R. Booker, M. Skowronski, J. P. Harbison, and V. G. Keramidas, J. Cryst. Growth 140, 249 (1994)
  74. "Compensation of shallow donors in dimethylaluminum methoxide-doped GaAs" Y. Park and M. Skowronski, J. Appl. Phys. 76, 5813 (1994)
  75. "Defect- and impurity related centers in compound semiconductors" M. Skowronski, in "Handbook on Semiconductors" vol. 3 "Materials, Properties and Preparation" pp. 1343-1398, ed. S. Mahajan, North Holland Publishing Co., Amsterdam (1994)
  76. "Photoluminescence of GaAs epilayers doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy" Y. Park and M. Skowronski, J. Appl. Phys. 75, 2640 (1994)
  77. "Oxygen doping of GaAs during OMVPE; Controlled introduction of impurity complexes" Y. Park, M. Skowronski, T. S. Rosseel, and M. O. Manasreh, Mat. Res. Soc. Symp. Proc. 325, 293 (1994)
  78. "Band edge optical absorption of molecular beam epitaxial GaSb grown on semi-insulating GaAs substrate" M. Shah, M. O. Manasreh, R. Kaspi, M. Y. Yen, B. A. Philips, M. Skowronski, and J. Shinar, Mat. Res. Soc. Symp. Proc. 325, 449 (1994)
  79. "Influence of growth temperature on ordering in InGaAs grown on (001) InP using tertiarybutylarsine source MOCVD" R. S. McFadden, M. Skowronski, and S. Mahajan, Mat. Res. Soc. Symp. Proc. 326, 287 (1994)
  80. "Large diameter 6H-SiC crystal growth for microwave device applications" H. M. Hobgood, J. P. McHugh, J. Greggi, R. H. Hopkins, and M. Skowronski, Inst. Phys. Conf. Ser. 137, 7 (1994)
  81. "Effect of growth temperature on GaN films grown on GaN buffer layers" L. B. Rowland, K. Doverspike, A. Giordana, M. Fatemi, D. K. Gaskill, M. Skowronski, J. A. Freitas, Inst. Phys. Conf. Ser. 137, 429 (1993)
  82. "Subsurface polishing-induced damage in silicon carbide crystals" A. Evayraye, S. Smith, M. Skowronski, W. C. Mitchel , J. Appl. Phys.  74, 5269 (1993)
  83. "Alkoxide doping of GaAs during Organometallic Vapor Phase Epitaxy" Y. Park, M. Skowronski, T. M. Rosseel, Mat. Res. Soc. Symp. Proc. 282, 75-80 (1993)
  84. "Oxygen in GaAs" M. Skowronski in "Deep Centers in Semiconductors" second edition, ed. S. Pantelides, Gordon and Breach Scientific Publishers, Inc. (1992)
  85. "Oxygen related point defects in GaAs" M. Skowronski, Materials Science Forum 83, 377 (1991)"On quantitative mapping of EL2 concentration in semi-insulating GaAs wafers" U. V. Desnica, B. G. Petrovic, M. Skowronski, and M. C. Cretella, J. Phys. III France, 1, 1481 (1991)
  86. "Effects of thermal annealing on oxygen related centers in GaAs" M. Skowronski and R. E. Kremer, J. Appl. Phys. 69, 7825 (1991)
  87. "Calibration of the isolated oxygen interstitial localized vibrational mode absorption line in GaAs" M. Skowronski, S. T. Neild, and R. E. Kremer, Appl. Phys. Lett. 58, 1545 (1991)
  88. "Complexes of oxygen and native defects in GaAs” M. Skowronski, Physical Review B 46, 9476 (1992)"Signature of the gallium-oxygen-gallium defect in GaAs by deep level transient spectroscopy measurements" S. T. Neild, M. Skowronski, and R. E. Kremer, Appl. Phys. Lett. 58, 859 (1990)
  89. "Absorption spectrum of EL2 defect in p-type GaAs" M. Skowronski, J. Appl. Phys. 68, 3741 (1990)"Location of energy levels of oxygen-vacancy complex in GaAs" M. Skowronski, S. T. Neild, and R. E. Kremer, Appl. Phys. Lett. 57, 902 (1990)

 

Return to:

[ MSkowronski Front Page ]